UT60N03L-TA3-T Specs and Replacement

Type Designator: UT60N03L-TA3-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 9.6 nC

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO220

UT60N03L-TA3-T substitution

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UT60N03L-TA3-T datasheet

 ..1. Size:247K  utc
 ut60n03l-ta3-t ut60n03g-ta3-t ut60n03l-tm3-t ut60n03g-tm3-t ut60n03l-tn3-r ut60n03g-tn3-r ut60n03l-tnd-r ut60n03g-tnd-r.pdf pdf_icon

UT60N03L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 1 DESCRIPTION TO-220 TO-251 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switch... See More ⇒

 7.1. Size:215K  utc
 ut60n03.pdf pdf_icon

UT60N03L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 TO-252 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the 1 overall efficiency of DC/DC converters and allows operation to higher TO-251 switchi... See More ⇒

Detailed specifications: UT3N10L-AG6-R, UT3N10G-AG6-R, UT3N10L-TN3-R, UT3N10G-TN3-R, UT3N10L-K08-3030-R, UT3N10G-K08-3030-R, UT4404G-S08-R, UT4421G-S08-R, IRF520, UT60N03G-TA3-T, UT60N03L-TM3-T, UT60N03G-TM3-T, UT60N03L-TN3-R, UT60N03G-TN3-R, UT60N03L-TND-R, UT60N03G-TND-R, UT8205AL-AL6-R

Keywords - UT60N03L-TA3-T MOSFET specs

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