UT60N03G-TND-R Specs and Replacement
Type Designator: UT60N03G-TND-R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO252
UT60N03G-TND-R substitution
- MOSFET ⓘ Cross-Reference Search
UT60N03G-TND-R datasheet
ut60n03l-ta3-t ut60n03g-ta3-t ut60n03l-tm3-t ut60n03g-tm3-t ut60n03l-tn3-r ut60n03g-tn3-r ut60n03l-tnd-r ut60n03g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 1 DESCRIPTION TO-220 TO-251 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switch... See More ⇒
ut60n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 TO-252 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the 1 overall efficiency of DC/DC converters and allows operation to higher TO-251 switchi... See More ⇒
Detailed specifications: UT4421G-S08-R, UT60N03L-TA3-T, UT60N03G-TA3-T, UT60N03L-TM3-T, UT60N03G-TM3-T, UT60N03L-TN3-R, UT60N03G-TN3-R, UT60N03L-TND-R, 75N75, UT8205AL-AL6-R, UT8205AG-AG6-R, UT8205AL-S08-R, UT8205AG-S08-R, UT8205AL-P08-R, UT8205AG-P08-R, UT9435HL-AA3-R, UT9435HG-AA3-R
Keywords - UT60N03G-TND-R MOSFET specs
UT60N03G-TND-R cross reference
UT60N03G-TND-R equivalent finder
UT60N03G-TND-R pdf lookup
UT60N03G-TND-R substitution
UT60N03G-TND-R replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
