UTM4052L-S08-R Datasheet and Replacement
Type Designator: UTM4052L-S08-R
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOP8
UTM4052L-S08-R substitution
UTM4052L-S08-R Datasheet (PDF)
utm4052l-s08-r utm4052g-s08-r utm4052l-tn4-r utm4052g-tn4-r utm4052l-tn4-t utm4052g-tn4-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) FEATURES SOP-8* N-Channel: 40V/7.5A RDS(ON) = 30 m (typ.) @VGS =10V RDS(ON) = 46 m(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 m(typ.) @ VGS= -10V 1RDS(ON) = 52 m(typ.) @ VGS= -5V * Super High Dense Cell Design TO-252-4* Reliable and Rugged SYMBO
utm4052l.pdf

UTM4052Lwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS
Datasheet: UT9564G-TN3-R , UT9564G-S08-R , UTD408L-TN3-R , UTD408G-TN3-R , UTM2054L-AB3-R , UTM2054G-AB3-R , UTM2054L-AE3-R , UTM2054G-AE3-R , IRF3205 , UTM4052G-S08-R , UTM4052L-TN4-R , UTM4052G-TN4-R , UTM4052L-TN4-T , UTM4052G-TN4-T , UTM4953L-S08-R , UTM4953G-S08-R , UTM6016L-TA3-T .
History: 1N65G-TA3-T | PHP45N03LT | SSF2N60D | PHP110NQ08T | BUZ77B | RU2021H | H05N60E
Keywords - UTM4052L-S08-R MOSFET datasheet
UTM4052L-S08-R cross reference
UTM4052L-S08-R equivalent finder
UTM4052L-S08-R lookup
UTM4052L-S08-R substitution
UTM4052L-S08-R replacement
History: 1N65G-TA3-T | PHP45N03LT | SSF2N60D | PHP110NQ08T | BUZ77B | RU2021H | H05N60E



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