All MOSFET. UTM4052L-S08-R Datasheet

 

UTM4052L-S08-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UTM4052L-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOP8

 UTM4052L-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UTM4052L-S08-R Datasheet (PDF)

 ..1. Size:434K  utc
 utm4052l-s08-r utm4052g-s08-r utm4052l-tn4-r utm4052g-tn4-r utm4052l-tn4-t utm4052g-tn4-t.pdf

UTM4052L-S08-R UTM4052L-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) FEATURES SOP-8* N-Channel: 40V/7.5A RDS(ON) = 30 m (typ.) @VGS =10V RDS(ON) = 46 m(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 m(typ.) @ VGS= -10V 1RDS(ON) = 52 m(typ.) @ VGS= -5V * Super High Dense Cell Design TO-252-4* Reliable and Rugged SYMBO

 6.1. Size:1606K  cn vbsemi
 utm4052l.pdf

UTM4052L-S08-R UTM4052L-S08-R

UTM4052Lwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: BL2N50-A

 

 
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