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UTM4052G-S08-R Spec and Replacement


   Type Designator: UTM4052G-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOP8

 UTM4052G-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UTM4052G-S08-R Specs

 ..1. Size:434K  utc
utm4052l-s08-r utm4052g-s08-r utm4052l-tn4-r utm4052g-tn4-r utm4052l-tn4-t utm4052g-tn4-t.pdf pdf_icon

UTM4052G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) FEATURES SOP-8 * N-Channel 40V/7.5A RDS(ON) = 30 m (typ.) @VGS =10V RDS(ON) = 46 m (typ.) @ VGS= 5V * P-Channel -40V/-6A RDS(ON) = 45 m (typ.) @ VGS= -10V 1 RDS(ON) = 52 m (typ.) @ VGS= -5V * Super High Dense Cell Design TO-252-4 * Reliable and Rugged SYMBO... See More ⇒

 7.1. Size:1606K  cn vbsemi
utm4052l.pdf pdf_icon

UTM4052G-S08-R

UTM4052L www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS ... See More ⇒

Detailed specifications: UT9564G-S08-R , UTD408L-TN3-R , UTD408G-TN3-R , UTM2054L-AB3-R , UTM2054G-AB3-R , UTM2054L-AE3-R , UTM2054G-AE3-R , UTM4052L-S08-R , IRF740 , UTM4052L-TN4-R , UTM4052G-TN4-R , UTM4052L-TN4-T , UTM4052G-TN4-T , UTM4953L-S08-R , UTM4953G-S08-R , UTM6016L-TA3-T , UTM6016G-TA3-T .

History: ZVN4206ASTOB | ZVN3306FTC

Keywords - UTM4052G-S08-R MOSFET specs

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 UTM4052G-S08-R equivalent finder
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