UTM4052G-TN4-T MOSFET. Datasheet pdf. Equivalent
Type Designator: UTM4052G-TN4-T
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm
Package: TO252-4
UTM4052G-TN4-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTM4052G-TN4-T Datasheet (PDF)
utm4052l-s08-r utm4052g-s08-r utm4052l-tn4-r utm4052g-tn4-r utm4052l-tn4-t utm4052g-tn4-t.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) FEATURES SOP-8* N-Channel: 40V/7.5A RDS(ON) = 30 m (typ.) @VGS =10V RDS(ON) = 46 m(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 m(typ.) @ VGS= -10V 1RDS(ON) = 52 m(typ.) @ VGS= -5V * Super High Dense Cell Design TO-252-4* Reliable and Rugged SYMBO
utm4052l.pdf
UTM4052Lwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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