All MOSFET. UTT25P10G-TQ2-R Datasheet

 

UTT25P10G-TQ2-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UTT25P10G-TQ2-R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 285 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO263

 UTT25P10G-TQ2-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UTT25P10G-TQ2-R Datasheet (PDF)

 0.1. Size:266K  utc
 utt25p10l-ta3-t utt25p10g-ta3-t utt25p10l-tf3-t utt25p10g-tf3-t utt25p10l-tn3-r utt25p10g-tn3-r utt25p10l-tq2-t utt25p10g-tq2-t utt25p10l-tq2-r utt25p10g-tq2-r.pdf

UTT25P10G-TQ2-R UTT25P10G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customerswith high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor drivers,switc

 6.1. Size:163K  utc
 utt25p10.pdf

UTT25P10G-TQ2-R UTT25P10G-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor d

 6.2. Size:794K  cn vbsemi
 utt25p10l.pdf

UTT25P10G-TQ2-R UTT25P10G-TQ2-R

UTT25P10Lwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P0850AT | P1070ATF

 

 
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