All MOSFET. UTT4850L-S08-R Datasheet

 

UTT4850L-S08-R Datasheet and Replacement


   Type Designator: UTT4850L-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
 

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UTT4850L-S08-R Datasheet (PDF)

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UTT4850L-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTT4850 Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4850 is a N-channel, it uses UTCs advanced technology to provide the customers with a minimum on state resistance and high switching speed. FEATURES SOP-8*RDS(ON)

 9.1. Size:140K  utc
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UTT4850L-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremely gate charge with a 25V gate rating The UTC UTT4815 is ESD protected and universally appl

Datasheet: UTT30P06L-TM3-T , UTT30P06G-TM3-T , UTT30P06L-TQ2-T , UTT30P06G-TQ2-T , UTT30P06L-TQ2-R , UTT30P06G-TQ2-R , UTT30P06L-TN3-R , UTT30P06G-TN3-R , 4N60 , UTT4850G-S08-R , UTT6NP10L-TN4-R , UTT6NP10G-TN4-R , UTT6NP10L-S08-R , UTT6NP10G-S08-R , 2P302A , 2P308A9 , 2P308B9 .

Keywords - UTT4850L-S08-R MOSFET datasheet

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