UTT6NP10L-S08-R MOSFET. Datasheet pdf. Equivalent

   Type Designator: UTT6NP10L-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOP8

UTT6NP10L-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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