2P979A Specs and Replacement

Type Designator: 2P979A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: КТ-56

2P979A substitution

- MOSFET ⓘ Cross-Reference Search

 

2P979A datasheet

 ..1. Size:100K  russia
 2p979a.pdf pdf_icon

2P979A

2979 n- , DMOS ... See More ⇒

 9.1. Size:109K  russia
 2p979v.pdf pdf_icon

2P979A

2979 n- , DMOS ... See More ⇒

 9.2. Size:100K  russia
 2p979b.pdf pdf_icon

2P979A

2979 n- , DMOS ... See More ⇒

Detailed specifications: 2P903V, 2P922A, 2P977A, 2P978A, 2P978B, 2P978V, 2P978G, 2P978D, K2611, 2P979B, 2P979V, 2P980A, 2P980BC, 2P981A, 2P981BC, 2P981VC, 2P985A-2

Keywords - 2P979A MOSFET specs

 2P979A cross reference

 2P979A equivalent finder

 2P979A pdf lookup

 2P979A substitution

 2P979A replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility