2P979B Datasheet and Replacement

   Type Designator: 2P979B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17.5 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: КТ-56
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