KP809A1 Specs and Replacement

Type Designator: KP809A1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 100 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-218

KP809A1 substitution

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KP809A1 datasheet

Detailed specifications: KP767A, KP767B, KP767V, KP777B, KP778B, KP778V, KP801B, KP809A, 2N7000, KP809B, KP809B1, KP809V, KP809V1, KP809G, KP809G1, KP809D, KP809D1

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