KP809G MOSFET. Datasheet pdf. Equivalent

Type Designator: KP809G

Marking Code: КП809Г

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 100 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 405 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO3

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KP809G Datasheet (PDF)

 ..1. Size:330K  russia
 kp809a kp809b kp809v kp809g kp809d kp809e kp809a1 kp809b1 kp809v1 kp809g1 kp809d1 kp809e1 kp809b1-5 kp809b2-5.pdf

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