QM3056M6 Datasheet. Specs and Replacement
Type Designator: QM3056M6 📄📄
Marking Code: M3056M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 19 nC
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 392 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PRPAK5X6
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QM3056M6 substitution
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QM3056M6 datasheet
qm3056m6.pdf
QM3056M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.2 m 30V 103A gate charge for most of the synchronous buck converter applications . Applications The QM3056M6 meet the RoHS and Green Product require... See More ⇒
qm3054m6.pdf
QM3054M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3054M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.8 m 30V 97A gate charge for most of the synchronous buck converter applications . Applications The QM3054M6 meet the RoHS and Green Product requirem... See More ⇒
qm3058m6.pdf
QM3058M6 N-Channel 30V Fast Switching MOSFET General Description Product Summary The QM3058M6 is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 3m 140A and gate charge for most of the synchronous buck converter applications . Applications The QM3058M6meet the R... See More ⇒
Detailed specifications: KP901A, KP901B, KP902A, KP903A, KP903B, KP903V, DN3134KW, QM3058M6, 13N50, SPP100N08S2L-07, SPB100N08S2L-07, CEF02N65D, CEP02N65D, CEB02N65D, HYG055N08NS1P, HYG055N08NS1B, HY1808AP
Keywords - QM3056M6 MOSFET specs
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