QM3056M6 Datasheet and Replacement
Type Designator: QM3056M6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 392 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PRPAK5X6
QM3056M6 Datasheet (PDF)
qm3056m6.pdf

QM3056M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.2 m 30V 103A gate charge for most of the synchronous buck converter applications . Applications The QM3056M6 meet the RoHS and Green Product require
qm3054m6.pdf

QM3054M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3054M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.8 m 30V 97A gate charge for most of the synchronous buck converter applications . Applications The QM3054M6 meet the RoHS and Green Product requirem
qm3058m6.pdf

QM3058M6 N-Channel 30V Fast Switching MOSFET General Description Product Summary The QM3058M6 is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 3m 140A and gate charge for most of the synchronous buck converter applications . Applications The QM3058M6meet the R
Datasheet: KP901A , KP901B , KP902A , KP903A , KP903B , KP903V , DN3134KW , QM3058M6 , TK10A60D , SPP100N08S2L-07 , SPB100N08S2L-07 , CEF02N65D , CEP02N65D , CEB02N65D , HYG055N08NS1P , HYG055N08NS1B , HY1808AP .
History: SPA04N50C3 | CMT2N7002K | 12NN10
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History: SPA04N50C3 | CMT2N7002K | 12NN10



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