QM3056M6
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM3056M6
Marking Code: M3056M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 17.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 392
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042
Ohm
Package:
PRPAK5X6
QM3056M6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM3056M6
Datasheet (PDF)
..1. Size:403K 1
qm3056m6.pdf
QM3056M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.2 m 30V 103A gate charge for most of the synchronous buck converter applications . Applications The QM3056M6 meet the RoHS and Green Product require
9.1. Size:400K 1
qm3054m6.pdf
QM3054M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3054M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.8 m 30V 97A gate charge for most of the synchronous buck converter applications . Applications The QM3054M6 meet the RoHS and Green Product requirem
9.2. Size:307K 1
qm3058m6.pdf
QM3058M6 N-Channel 30V Fast Switching MOSFET General Description Product Summary The QM3058M6 is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 3m 140A and gate charge for most of the synchronous buck converter applications . Applications The QM3058M6meet the R
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