All MOSFET. CEB02N65D Datasheet

 

CEB02N65D Datasheet and Replacement


   Type Designator: CEB02N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.9 Ohm
   Package: TO263
 

 CEB02N65D substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEB02N65D Datasheet (PDF)

 ..1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEB02N65D

CEP02N65D/CEB02N65D CEF02N65DPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65D 650V 6.9 2A 10VCEB02N65D 650V 6.9 2A 10VCEF02N65D 650V 6.9 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF S

 6.1. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEB02N65D

CEP02N65A/CEB02N65ACEF02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP02N65A 650V 10.5 1.3A 10VCEB02N65A 650V 10.5 1.3A 10VCEF02N65A 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES C

 6.2. Size:393K  cet
 cep02n65g ceb02n65g cef02n65g.pdf pdf_icon

CEB02N65D

CEP02N65G/CEB02N65GCEF02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65G 650V 5.5 2A 10VCEB02N65G 650V 5.5 2A 10VCEF02N65G 650V 5.5 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(

 7.1. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEB02N65D

CEP02N6G/CEB02N6GCEF02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N6G 600V 5 2.2A 10VCEB02N6G 600V 5 2.2A 10VCEF02N6G 600V 5 2.2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK

SHOW MORE

Datasheet: KP903V , DN3134KW , QM3058M6 , QM3056M6 , SPP100N08S2L-07 , SPB100N08S2L-07 , CEF02N65D , CEP02N65D , IRF1407 , HYG055N08NS1P , HYG055N08NS1B , HY1808AP , HY1808AM , HY1808AB , HY1808APS , HY1808APM , MDP1991 .

History: FTK4828 | BUZ272 | AP2761I-A-HF | BUZ231 | HY1808AP | BUZ357 | SVTP209R7NP7

Keywords - CEB02N65D MOSFET datasheet

 CEB02N65D cross reference
 CEB02N65D equivalent finder
 CEB02N65D lookup
 CEB02N65D substitution
 CEB02N65D replacement

 

 
Back to Top

 


 
.