STP200N3LL
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP200N3LL
Marking Code: 200N3LL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 176.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 53
nC
trⓘ - Rise Time: 183
nS
Cossⓘ -
Output Capacitance: 640
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024
Ohm
Package:
TO-220
STP200N3LL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP200N3LL
Datasheet (PDF)
..1. Size:675K 1
stp200n3ll.pdf
STP200N3LL N-channel 30 V, 2.15 m typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STP200N3LL 30 V 2.4 m 120 A 176.5 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Interna
7.1. Size:404K st
stp200nf04 stb200nf04 stb200nf04-1.pdf
STP200NF04STB200NF04 - STB200NF04-1N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAKSTripFETII MOSFETTable 1: General Features Figure 1: PackageType VDSS RDS(on) ID PwSTB200NF04 40 V
7.2. Size:854K st
stb200n6f3 sti200n6f3 stp200n6f3.pdf
STB200N6F3, STI200N6F3STP200N6F3N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB200N6F3 60 V
7.3. Size:354K st
stp200nf04l stb200nf04l stb200nf04l-1.pdf
STP200NF04LSTB200NF04L - STB200NF04L-1N-CHANNEL 40V - 3 m - 120 A TO-220/DPAK/IPAKSTripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTB200NF04L 40 V 3.5 m 120 ASTP200NF04L 40 V 3.8 m 120 ASTB200NF04L-1 40 V 3.8 m 120 A TYPICAL RDS(on) = 3m 33211 100% AVALANCHE TESTEDTO-220DPAK LOW THERESHOLD DRIVEDESCRIPT
7.4. Size:557K st
stp200nf03.pdf
STP200NF03STB200NF03 STB200NF03-1N-CHANNEL 30V - 0.0032 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB200NF03/-1 30 V
7.5. Size:407K st
stb200n4f3 stp200n4f3.pdf
STP200N4F3STB200N4F3N-channel 40 V, 0.0025 , 120 A, D2PAK, TO-220planar STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID PwSTB200N4F3 40 V
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