All MOSFET. HM100N02 Datasheet

 

HM100N02 Datasheet and Replacement


   Type Designator: HM100N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220
 

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HM100N02 Datasheet (PDF)

 ..1. Size:772K  cn hmsemi
hm100n02.pdf pdf_icon

HM100N02

HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

 0.1. Size:544K  cn hmsemi
hm100n02k.pdf pdf_icon

HM100N02

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

 7.1. Size:704K  cn hmsemi
hm100n03.pdf pdf_icon

HM100N02

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.2. Size:759K  cn hmsemi
hm100n03k.pdf pdf_icon

HM100N02

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

Datasheet: QN3107M6N , S70N08R , S70N08S , S70N08RN , S70N08RP , STP200N3LL , BSS84KR , HM0565 , AON6380 , HM100N02K , HM100N03 , HM100N03D , HM100N03K , HM100N06F , HM100N15 , HM100N15A , HM100N20T .

History: PTA08N100

Keywords - HM100N02 MOSFET datasheet

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