All MOSFET. HM100N03D Datasheet

 

HM100N03D Datasheet and Replacement


   Type Designator: HM100N03D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 1135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: DFN5X6
 

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HM100N03D Datasheet (PDF)

 ..1. Size:428K  cn hmsemi
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HM100N03D

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 6.1. Size:704K  cn hmsemi
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HM100N03D

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 6.2. Size:759K  cn hmsemi
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HM100N03D

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.1. Size:544K  cn hmsemi
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HM100N03D

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

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Datasheet: S70N08RN , S70N08RP , STP200N3LL , BSS84KR , HM0565 , HM100N02 , HM100N02K , HM100N03 , AO3401 , HM100N03K , HM100N06F , HM100N15 , HM100N15A , HM100N20T , HM100P03 , HM100P03K , HM1060E .

History: IRLMS1902PBF | KHB4D0N65F | IRFPC50 | FCH072N60F-F085 | TK60A08J1 | R6504KNJ

Keywords - HM100N03D MOSFET datasheet

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