HM100N20T MOSFET Datasheet: N-Ch, 200V, 100A. Full specification with pinout and replacement list

HM100N20T Specs and Replacement

Type Designator: HM100N20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 529 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO247

HM100N20T substitution

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HM100N20T datasheet

..1. Size:556K cn hmsemi
hm100n20t.pdf pdf_icon

H N-Channel Enhancement Mode Power MOSFET Description The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =100A RDS(ON) ... See More ⇒

8.1. Size:704K cn hmsemi
hm100n03.pdf pdf_icon

HM100N03 N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒

8.2. Size:553K cn hmsemi
hm100n15.pdf pdf_icon

HM100N15 N-Channel Enhancement Mode Power MOSFET Description The HM100N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =140V,ID =100A RDS(ON) ... See More ⇒

8.3. Size:759K cn hmsemi
hm100n03k.pdf pdf_icon

HM100N03K N-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒