HM100P03 MOSFET Datasheet: P-Ch, 30V, 100A. Full specification with pinout and replacement list

HM100P03 Specs and Replacement

Type Designator: HM100P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 486 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220

HM100P03 substitution

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HM100P03 datasheet

..1. Size:877K cn hmsemi
hm100p03.pdf pdf_icon

HM100P03 Description The HM100P03 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -100A RDS(ON) ... See More ⇒

0.1. Size:641K cn hmsemi
hm100p03k.pdf pdf_icon

H Description The HM100P03K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -100A RDS(ON) ... See More ⇒

9.1. Size:704K cn hmsemi
hm100n03.pdf pdf_icon

HM100N03 N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒

9.2. Size:553K cn hmsemi
hm100n15.pdf pdf_icon

HM100N15 N-Channel Enhancement Mode Power MOSFET Description The HM100N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =140V,ID =100A RDS(ON) ... See More ⇒