HM100P03 Datasheet and Replacement. Cross Reference Search

..1. Size:877K cn hmsemi
hm100p03.pdf pdf_icon

HM100P03Description The HM100P03 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -100A RDS(ON)

0.1. Size:641K cn hmsemi
hm100p03k.pdf pdf_icon

H Description The HM100P03K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -100A RDS(ON)

9.1. Size:704K cn hmsemi
hm100n03.pdf pdf_icon

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

9.2. Size:553K cn hmsemi
hm100n15.pdf pdf_icon

HM100N15 N-Channel Enhancement Mode Power MOSFET Description The HM100N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =140V,ID =100A RDS(ON)

9.3. Size:759K cn hmsemi
hm100n03k.pdf pdf_icon

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

9.4. Size:428K cn hmsemi
hm100n03d.pdf pdf_icon

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

9.5. Size:544K cn hmsemi
hm100n02k.pdf pdf_icon

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

9.6. Size:426K cn hmsemi
hm100n06f.pdf pdf_icon

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

9.7. Size:556K cn hmsemi
hm100n20t.pdf pdf_icon

H N-Channel Enhancement Mode Power MOSFET Description The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =100A RDS(ON)

9.8. Size:596K cn hmsemi
hm100n15a.pdf pdf_icon

HM100N15AN-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =150V,ID =100A Schematic diagram RDS(ON)

9.9. Size:772K cn hmsemi
hm100n02.pdf pdf_icon

HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

HM100P03 Datasheet (PDF)

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