HM10N10Q MOSFET. Datasheet pdf. Equivalent

   Type Designator: HM10N10Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22.3 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 44.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN3X3

HM10N10Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS