FDMA420NZ Datasheet. Specs and Replacement
Type Designator: FDMA420NZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: MICROFET
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FDMA420NZ substitution
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FDMA420NZ datasheet
fdma420nz.pdf
August 2009 FDMA420NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30m General Description Features This Single N-Channel MOSFET has been designed using RDS(on) = 30m @ VGS = 4.5 V, ID = 5.7A Fairchild Semiconductor s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special RDS(on) = 40m @ VGS = 2.5 V, ID = 5.0A MicroFET leadframe. ... See More ⇒
fdma410nz.pdf
April 2009 FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 A optimize the rDS(ON) @ VGS = 1.5 V on special M... See More ⇒
fdma430nz.pdf
August 2009 FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40m General Description Features This Single N-Channel MOSFET has been designed using RDS(on) = 40m @ VGS = 4.5 V, ID = 5.0A Fairchild Semiconductor s advanced Power Trench process RDS(on) = 50m @ VGS = 2.5 V, ID = 4.5A to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. ... See More ⇒
Detailed specifications: STS3404, FDMA2002NZ, STS3402, FDMA291P, FDMA3023PZ, FDMA3028N, STS3401A, FDMA410NZ, 4435, FDMA430NZ, STS3401, FDMA507PZ, FDMA510PZ, FDMA520PZ, FDMA530PZ, FDMA6023PZT, FDMA7630
Keywords - FDMA420NZ MOSFET specs
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