All MOSFET. HM10P10D Datasheet

 

HM10P10D Datasheet and Replacement


   Type Designator: HM10P10D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: DFN5X6
      - MOSFET Cross-Reference Search

 

HM10P10D Datasheet (PDF)

 ..1. Size:676K  cn hmsemi
 hm10p10d.pdf pdf_icon

HM10P10D

HM10P10D P-Channel Enhancement Mode Power MOSFET Description The HM10P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON)

 7.1. Size:785K  cn hmsemi
 hm10p10q.pdf pdf_icon

HM10P10D

HM10P10Q P-Channel Enhancement Mode Power MOSFET Description The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - HM10P10D MOSFET datasheet

 HM10P10D cross reference
 HM10P10D equivalent finder
 HM10P10D lookup
 HM10P10D substitution
 HM10P10D replacement

 

 
Back to Top

 


 
.