HM120N04 Specs and Replacement
Type Designator: HM120N04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 970 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
HM120N04 substitution
- MOSFET ⓘ Cross-Reference Search
HM120N04 datasheet
hm120n04.pdf
HM120N04 N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON) ... See More ⇒
hm120n04k.pdf
HM120N04K N-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒
hm120n04i.pdf
Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒
hm120n04d.pdf
HM120N04D N-Channel Enhancement Mode Power MOSFET Description The HM120N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒
Detailed specifications: HM10N80A, HM10N80F, HM10P10D, HM10P10Q, HM110N03D, HM1207E, HM120N03, HM120N03K, IRF740, HM120N04D, HM120N04I, HM120N04K, HM12N15I, HM12N20D, HM12N60, HM12N60F, HM12N65
Keywords - HM120N04 MOSFET specs
HM120N04 cross reference
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History: IVN5001ANH | BRD840 | G06N10 | IPA086N10N3 | IXCY01N90E
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