HM120N04 Datasheet and Replacement
Type Designator: HM120N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 970 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
HM120N04 substitution
HM120N04 Datasheet (PDF)
hm120n04.pdf
HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)
hm120n04k.pdf
HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
hm120n04i.pdf
Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
hm120n04d.pdf
HM120N04DN-Channel Enhancement Mode Power MOSFET Description The HM120N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
Datasheet: HM10N80A , HM10N80F , HM10P10D , HM10P10Q , HM110N03D , HM1207E , HM120N03 , HM120N03K , IRF740 , HM120N04D , HM120N04I , HM120N04K , HM12N15I , HM12N20D , HM12N60 , HM12N60F , HM12N65 .
History: JCS10N60CC | 2SK1024-01
Keywords - HM120N04 MOSFET datasheet
HM120N04 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: JCS10N60CC | 2SK1024-01
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