All MOSFET. HM120N04I Datasheet

 

HM120N04I Datasheet and Replacement


   Type Designator: HM120N04I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO251
 

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HM120N04I Datasheet (PDF)

 ..1. Size:526K  cn hmsemi
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HM120N04I

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.1. Size:977K  cn hmsemi
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HM120N04I

HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)

 6.2. Size:711K  cn hmsemi
hm120n04k.pdf pdf_icon

HM120N04I

HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.3. Size:904K  cn hmsemi
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HM120N04I

HM120N04DN-Channel Enhancement Mode Power MOSFET Description The HM120N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

Datasheet: HM10P10D , HM10P10Q , HM110N03D , HM1207E , HM120N03 , HM120N03K , HM120N04 , HM120N04D , 20N60 , HM120N04K , HM12N15I , HM12N20D , HM12N60 , HM12N60F , HM12N65 , HM12N65F , HM13N50 .

History: NCE85H25 | CS9N95F | KI2312 | SSF2610E | CSFR3N60F | TPCA8027-H | SVS7N60FJD2

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