HM12N60F MOSFET Datasheet: N-Ch, 600V, 12A. Full specification with pinout and replacement list

HM12N60F Specs and Replacement

Type Designator: HM12N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220F

HM12N60F substitution

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HM12N60F datasheet

..1. Size:328K cn hmsemi
hm12n60 hm12n60f.pdf pdf_icon

HM12N60 / HM12N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 12.0A, 600V, RDS(on) = 0.65 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 52nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switc... See More ⇒

8.1. Size:367K cn hmsemi
hm12n65 hm12n65f.pdf pdf_icon

HM12N65 / HM12N65F 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 12.0A, 650V, RDS(on) = 0.75 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 52nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switching Fast w... See More ⇒

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phm12nq20t.pdf pdf_icon

PHM12NQ20T TrenchMOS standard level FET Rev. 01 30 January 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHM12NQ20T in SOT685-1 (QLPAK). 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.... See More ⇒

9.2. Size:47K chenmko
chm12n10pagp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM12N10PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe... See More ⇒