All MOSFET. HM1404D Datasheet

 

HM1404D Datasheet and Replacement


   Type Designator: HM1404D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
 

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HM1404D Datasheet (PDF)

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HM1404D

HM1404DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

 8.1. Size:783K  cn hmsemi
 hm1404b.pdf pdf_icon

HM1404D

40VDS20VGS130A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=40VVGSS=20VID=130A RDS(ON)=4m(max.)@VGS=10V High Dense Cell Design Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Power Management in

 8.2. Size:501K  cn hmsemi
 hm1404c.pdf pdf_icon

HM1404D

HM1404CN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =170A RDS(ON)

 8.3. Size:471K  cn hmsemi
 hm1404.pdf pdf_icon

HM1404D

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

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Datasheet: HM12N65F , HM13N50 , HM13N50F , HM13P10 , HM13P10K , HM1404 , HM1404B , HM1404C , IRFB4227 , HM150N03 , HM150N03D , HM150N03K , HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F .

Keywords - HM1404D MOSFET datasheet

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