All MOSFET. HM18N50F Datasheet

 

HM18N50F MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM18N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 69 nC
   trⓘ - Rise Time: 43.5 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.283 Ohm
   Package: TO220F

 HM18N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM18N50F Datasheet (PDF)

 ..1. Size:4054K  cn hmsemi
 hm18n50a hm18n50f.pdf

HM18N50F HM18N50F

HM18N50A / HM18N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 500V, RDS(on)typ. = 236m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 69nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 9.1. Size:89K  philips
 phm18nq15t.pdf

HM18N50F HM18N50F

PHM18NQ15TTrenchMOS standard level FETRev. 02 20 August 2004 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC converter primary sid

 9.2. Size:646K  cn hmsemi
 hm18n03d.pdf

HM18N50F HM18N50F

HM18N03D30V N-Channel Enhancement Mode MOSFETDescription Schematic diagram The uses advanced trench technologyDto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This Gdevice is suitable for use as a load switch or in PWM applications. General Features S VDS =30VID =18A Marking and pin assignment RDS(ON)(T

 9.3. Size:1112K  cn hmsemi
 hm18n40 hm18n40f hm18n40a.pdf

HM18N50F HM18N50F

HM18N40 / HM18N40F / HM18N40A400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 18A, 400V, RDS(on) typ. = 0.20@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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