All MOSFET. HM1P15PR Datasheet

 

HM1P15PR Datasheet and Replacement


   Type Designator: HM1P15PR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: SOT89
 

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HM1P15PR Datasheet (PDF)

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HM1P15PR

HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON

 8.1. Size:463K  cn hmsemi
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HM1P15PR

HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON

 9.1. Size:1001K  cn hmsemi
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HM1P15PR

HM1P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR

Datasheet: HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , HM1P10MR , HM1P15MR , 18N50 , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 , HM20N15A , HM20N15D .

History: APT41M80L | BLS65R380-D | TSP8N65M | CJM1206 | 2SK1867 | HM2P10R | S80N08RP

Keywords - HM1P15PR MOSFET datasheet

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