HM1P15PR Datasheet and Replacement
Type Designator: HM1P15PR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT89
HM1P15PR substitution
HM1P15PR Datasheet (PDF)
hm1p15pr.pdf
HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
hm1p15mr.pdf
HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
hm1p10mr.pdf
HM1P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR
Datasheet: HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , HM1P10MR , HM1P15MR , BS170 , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 , HM20N15A , HM20N15D .
History: HA20N60 | 2SK2973 | AO3456 | TMPF12N60 | AO3494 | NTMFS5C670NLT3G | 2SK4091-ZK-E2-AY
Keywords - HM1P15PR MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: HA20N60 | 2SK2973 | AO3456 | TMPF12N60 | AO3494 | NTMFS5C670NLT3G | 2SK4091-ZK-E2-AY
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