HM1P15PR Datasheet and Replacement
Type Designator: HM1P15PR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT89
HM1P15PR substitution
HM1P15PR Datasheet (PDF)
hm1p15pr.pdf

HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
hm1p15mr.pdf

HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
hm1p10mr.pdf

HM1P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR
Datasheet: HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , HM1P10MR , HM1P15MR , CS150N03A8 , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 , HM20N15A , HM20N15D .
History: 2SK538 | STL70N10F3 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G | FDZ375P
Keywords - HM1P15PR MOSFET datasheet
HM1P15PR cross reference
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History: 2SK538 | STL70N10F3 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G | FDZ375P



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