HM1P15PR MOSFET. Datasheet pdf. Equivalent
Type Designator: HM1P15PR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT89
HM1P15PR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM1P15PR Datasheet (PDF)
hm1p15pr.pdf
HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
hm1p15mr.pdf
HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
hm1p10mr.pdf
HM1P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
