HM1P15PR PDF and Equivalents Search

 

HM1P15PR Specs and Replacement

Type Designator: HM1P15PR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: SOT89

HM1P15PR substitution

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HM1P15PR datasheet

 ..1. Size:370K  cn hmsemi
hm1p15pr.pdf pdf_icon

HM1P15PR

HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON ... See More ⇒

 8.1. Size:463K  cn hmsemi
hm1p15mr.pdf pdf_icon

HM1P15PR

HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON ... See More ⇒

 9.1. Size:1001K  cn hmsemi
hm1p10mr.pdf pdf_icon

HM1P15PR

HM1P10MR -100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS D R ... See More ⇒

Detailed specifications: HM18P10K, HM19N40, HM1N50MR, HM1N60, HM1N60PR, HM1N60R, HM1P10MR, HM1P15MR, BS170, HM2015DN03Q, HM2030Q, HM20N06, HM20N06IA, HM20N06KA, HM20N15, HM20N15A, HM20N15D

Keywords - HM1P15PR MOSFET specs

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