HM1P15PR Specs and Replacement
Type Designator: HM1P15PR
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 48 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT89
HM1P15PR substitution
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HM1P15PR datasheet
hm1p15pr.pdf
HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON ... See More ⇒
hm1p15mr.pdf
HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON ... See More ⇒
hm1p10mr.pdf
HM1P10MR -100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS D R ... See More ⇒
Detailed specifications: HM18P10K, HM19N40, HM1N50MR, HM1N60, HM1N60PR, HM1N60R, HM1P10MR, HM1P15MR, BS170, HM2015DN03Q, HM2030Q, HM20N06, HM20N06IA, HM20N06KA, HM20N15, HM20N15A, HM20N15D
Keywords - HM1P15PR MOSFET specs
HM1P15PR cross reference
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