HM20N06 MOSFET Datasheet: N-Ch, 60V, 20A. Full specification with pinout and replacement list

HM20N06 Specs and Replacement

Type Designator: HM20N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: TO220

HM20N06 substitution

- MOSFET ⓘ Cross-Reference Search

HM20N06 datasheet

..1. Size:655K cn hmsemi
hm20n06.pdf pdf_icon

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON) ... See More ⇒

0.1. Size:97K chenmko
chm20n06pagp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM20N06PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power... See More ⇒

0.2. Size:544K cn hmsemi
hm20n06ka.pdf pdf_icon

HM20N06KA N-Channel Enhancement Mode Power MOSFET Description The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON) ... See More ⇒

0.3. Size:565K cn hmsemi
hm20n06ia.pdf pdf_icon