FDMA7630 Datasheet. Specs and Replacement

Type Designator: FDMA7630  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: MICROFET

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FDMA7630 datasheet

 ..1. Size:224K  fairchild semi
 fdma7630.pdf pdf_icon

FDMA7630

September 2010 FDMA7630 Single N-Channel PowerTrench MOSFET 30 V, 11 A, 13 m Features General Description Max rDS(on) = 13 m at VGS = 10 V, ID = 11 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 20 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching ... See More ⇒

 7.1. Size:230K  fairchild semi
 fdma7632.pdf pdf_icon

FDMA7630

August 2010 FDMA7632 Single N-Channel PowerTrench MOSFET 30 V, 9 A, 19 m Features General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low P... See More ⇒

 8.1. Size:216K  fairchild semi
 fdma7670.pdf pdf_icon

FDMA7630

January 2012 FDMA7670 Single N-Channel PowerTrench MOSFET 30 V, 11 A, 15 m Features General Description Max rDS(on) = 15 m at VGS = 10 V, ID = 11 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 22 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching Lo... See More ⇒

 8.2. Size:242K  fairchild semi
 fdma7628.pdf pdf_icon

FDMA7630

May 2012 FDMA7628 Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 m Features General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 A optimize the rDS(ON) @ VGS = 1.5 V on specia... See More ⇒

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Detailed specifications: FDMA420NZ, FDMA430NZ, STS3401, FDMA507PZ, FDMA510PZ, FDMA520PZ, FDMA530PZ, FDMA6023PZT, IRF1010E, STS3400, FDMA7632, STS3116E, FDMA7670, STS2622A, FDMA7672, STS2621, FDMB3800N

Keywords - FDMA7630 MOSFET specs

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