All MOSFET. HM20P02Q Datasheet

 

HM20P02Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM20P02Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 498 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: DFN3X3

 HM20P02Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM20P02Q Datasheet (PDF)

 ..1. Size:991K  cn hmsemi
 hm20p02q.pdf

HM20P02Q HM20P02Q

HM20P02QP-Channel Enhancement Mode Power MOSFET DDescription The HM20P02Q uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RDS(ON)

 7.1. Size:935K  cn hmsemi
 hm20p02d.pdf

HM20P02Q HM20P02Q

P-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -20A RDS(ON)

 8.1. Size:115K  chenmko
 chm20p06pagp.pdf

HM20P02Q HM20P02Q

CHENMKO ENTERPRISE CO.,LTDCHM20P06PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged

 9.1. Size:501K  cn hmsemi
 hm20pd05.pdf

HM20P02Q HM20P02Q

P-Channel Enhancement Mode Power MOSFET Description The HM20PD05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = -20V,ID =- 5A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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