HM20PD05 MOSFET Datasheet: P-Ch, 20V, 5A. Full specification with pinout and replacement list

HM20PD05 Specs and Replacement

Type Designator: HM20PD05

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSSOP-8

HM20PD05 substitution

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HM20PD05 datasheet

..1. Size:501K cn hmsemi
hm20pd05.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET Description The HM20PD05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = -20V,ID =- 5A RDS(ON) ... See More ⇒

9.1. Size:115K chenmko
chm20p06pagp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM20P06PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * High density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Rugged ... See More ⇒

9.2. Size:991K cn hmsemi
hm20p02q.pdf pdf_icon

HM20P02Q P-Channel Enhancement Mode Power MOSFET D Description The HM20P02Q uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RDS(ON) ... See More ⇒

9.3. Size:935K cn hmsemi
hm20p02d.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET Description D The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,ID = -20A RDS(ON) ... See More ⇒

Detailed specifications: HM20N50A, HM20N50F, HM20N60, HM20N60A, HM20N60F, HM20N65F, HM20P02D, HM20P02Q, 75N75, HM2300B, HM2300C, HM2300D, HM2300DR, HM2300PR, HM2301, HM2301A, HM2301B