HM2300C MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

HM2300C Specs and Replacement

Type Designator: HM2300C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT23

HM2300C substitution

- MOSFET ⓘ Cross-Reference Search

HM2300C datasheet

..1. Size:678K cn hmsemi
hm2300c.pdf pdf_icon

HM2300C N-Channel Enhancement Mode Power MOSFET Description D The HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON) ... See More ⇒

8.1. Size:1890K cn vbsemi
hm2300.pdf pdf_icon

HM2300 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Convert... See More ⇒

8.2. Size:644K cn hmsemi
hm2300d.pdf pdf_icon

HM2300D N-Channel Enhancement Mode Power MOSFET Description D The HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON) ... See More ⇒

8.3. Size:567K cn hmsemi
hm2300b.pdf pdf_icon

HM2300B N-Channel Enhancement Mode Power MOSFET Description D The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON) ... See More ⇒