HM2301 Datasheet and Replacement

HM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

CHENMKO ENTERPRISE CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Po rtable* High speed switchFEATURESOT-23* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON)* Suitable for high packing density.* Rugged and reliable.(1)* High saturation current capabili

HM2301KRwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert

HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

HM2301 P-Channel Trench Power MOSFETGeneral DescriptionThe HM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2. AR

HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BKR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BSR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

HM2301BP-Channel Enhancement Mode Power MOSFET Description DThe HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.5A RDS(ON)

HM2301EP-Channel Trench Power MOSFETGeneral DescriptionThe HM2301E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2.0AR

HM2301BJR P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (mA) DS DS(on) D0.45@ V =-4.5V GSG1 -20 0.62@ VGS=-2.5V -800 0.86@ V =-1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistan

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistance

HM2301KR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

HM2301FP-Channel Enhancement Mode Power MOSFET Description DThe HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.8A RDS(ON)