HM2302B MOSFET. Datasheet pdf. Equivalent
Type Designator: HM2302B
Marking Code: A2SHB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.9 nC
trⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
HM2302B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM2302B Datasheet (PDF)
hm2302b.pdf
HM2302BN-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)
hm2302bwsr.pdf
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage
hm2302bwkr.pdf
HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)
hm2302bjr.pdf
JHM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m@ 4.5V20V 450m@2.5V0.75A 800m@1.8V1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage
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