HM2302BWKR Datasheet and Replacement

HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage

JHM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m@ 4.5V20V 450m@2.5V0.75A 800m@1.8V1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage

HM2302BN-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)