HM2305B MOSFET Datasheet: P-Ch, 12V, 3A. Full specification with pinout and replacement list

HM2305B Specs and Replacement

Type Designator: HM2305B

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

HM2305B substitution

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HM2305B datasheet

..1. Size:512K cn hmsemi
hm2305b.pdf pdf_icon

HM2305B P-Channel Enhancement Mode Power MOSFET Description D The HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -12V,ID = -4.1A RDS(ON) ... See More ⇒

8.1. Size:97K chenmko
chm2305gp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM2305GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur... See More ⇒

8.2. Size:1649K cn vbsemi
hm2305pr.pdf pdf_icon

HM2305PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABS... See More ⇒

8.3. Size:742K cn hmsemi
hm2305d.pdf pdf_icon

HM2305D P-Channel Enhancement Mode Power MOSFET Description D The HM2305D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -8.0A RDS(ON) ... See More ⇒