All MOSFET. FDMA7670 Datasheet

 

FDMA7670 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMA7670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: MICROFET

 FDMA7670 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMA7670 Datasheet (PDF)

 ..1. Size:216K  fairchild semi
 fdma7670.pdf

FDMA7670 FDMA7670

January 2012FDMA7670Single N-Channel PowerTrench MOSFET 30 V, 11 A, 15 mFeatures General Description Max rDS(on) = 15 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 22 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching Lo

 7.1. Size:228K  fairchild semi
 fdma7672.pdf

FDMA7670 FDMA7670

April 2012FDMA7672Single N-Channel PowerTrench MOSFET 30 V, 9 A, 21 mFeatures General Description Max rDS(on) = 21 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 32 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low Pr

 8.1. Size:242K  fairchild semi
 fdma7628.pdf

FDMA7670 FDMA7670

May 2012FDMA7628Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 mFeatures General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 AThis Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 Aoptimize the rDS(ON) @ VGS = 1.5 V on specia

 8.2. Size:224K  fairchild semi
 fdma7630.pdf

FDMA7670 FDMA7670

September 2010FDMA7630Single N-Channel PowerTrench MOSFET 30 V, 11 A, 13 mFeatures General Description Max rDS(on) = 13 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 20 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching

 8.3. Size:230K  fairchild semi
 fdma7632.pdf

FDMA7670 FDMA7670

August 2010FDMA7632Single N-Channel PowerTrench MOSFET 30 V, 9 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low P

 8.4. Size:2886K  cn vbsemi
 fdma7628.pdf

FDMA7670 FDMA7670

FDMA7628www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SC-70-6L-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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