HM2309C MOSFET Datasheet: P-Ch, 60V, 3A. Full specification with pinout and replacement list

HM2309C Specs and Replacement

Type Designator: HM2309C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 109 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT23

HM2309C substitution

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HM2309C datasheet

..1. Size:541K cn hmsemi
hm2309c.pdf pdf_icon

P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook ... See More ⇒

8.1. Size:873K cn hmsemi
hm2309.pdf pdf_icon

HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 215m @VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON) 260m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex... See More ⇒

8.2. Size:1022K cn hmsemi
hm2309b.pdf pdf_icon

HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 188m @VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON) 266m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to ... See More ⇒

8.3. Size:413K cn hmsemi
hm2309d.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET Description The HM2309D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON) ... See More ⇒