HM2309DR MOSFET Datasheet: P-Ch, 60V, 1A. Full specification with pinout and replacement list

HM2309DR Specs and Replacement

   Type Designator: HM2309DR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

   tr ⓘ - Rise Time: 33.1 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.188 Ohm
   Package: DFN2X2

HM2309DR substitution

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HM2309DR datasheet

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P-Channel Enhancement Mode Power MOSFET Description The HM2309D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON) ... See More ⇒

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HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 215m @VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON) 260m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex... See More ⇒

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HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 188m @VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON) 266m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to ... See More ⇒