HM2318B MOSFET. Datasheet pdf. Equivalent
Type Designator: HM2318B
Marking Code: 18YW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 6 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042(typ) Ohm
Package: SOT23
HM2318B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM2318B Datasheet (PDF)
hm2318b.pdf
HM2318BN Channel Enhancement Mode MOSFET DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer
hm2318apr.pdf
HM2318 N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)
hm2318a.pdf
HM2318A N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM2318A is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) min
chm2313qgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2313QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)
chm2316gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2316GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm2316qgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2316QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*
chm2310gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturati
chm2314gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2314GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur
chm2313gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2313GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm2313gp-a.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2313GP-ASURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s
hm2310pr.pdf
HM2310PRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
hm2310.pdf
HM2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
hm2310b.pdf
HM2310BN Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co
hm2312b.pdf
HM2312BN-Channel Enhancement Mode Power MOSFET Description DThe HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2310pr.pdf
HM2310PRDescription The HM2310PR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other switching application. SGeneral Feature VDS =60V,ID =4.0A Schematic diagram RDS(ON)
hm2319a.pdf
HM2319AP-Channel Enhancement Mode Power MOSFET DDescription The HM2319A uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)
hm2314.pdf
HM2314N-Channel Enhancement Mode Power MOSFET Description DThe HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2310.pdf
HM2310N-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM2310 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a SBattery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)
hm2312.pdf
HM2312N-Channel Enhancement Mode Power MOSFET Description DThe HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2314b.pdf
HM2314BN-Channel Enhancement Mode Power MOSFET Description DThe HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2319.pdf
HM2319P-Channel Enhancement Mode Power MOSFET DDescription The HM2319 uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = - A RDS(ON)
hm2310c.pdf
HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
