HM24N20K Datasheet and Replacement. Cross Reference Search

HM24N20K Datasheet (PDF)

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HM24N20K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)

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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

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HM24N20 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)

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hm24n50a.pdf pdf_icon

HM24N50A500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 25A, 500V, RDS(on)typ. = 167m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance

Datasheet: HM2319 , HM2319A , HM2328 , HM2333 , HM2341 , HM2341B , HM2369 , HM24N20 , IRF1010E , HM24N20KA , HM24N50A , HM25N03D , HM25N03Q , HM25N06D , HM25N06Q , HM25N08D , HM25N50 .