HM25N03D Specs and Replacement

Type Designator: HM25N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN5X6

HM25N03D substitution

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HM25N03D datasheet

 ..1. Size:583K  cn hmsemi
 hm25n03d.pdf pdf_icon

HM25N03D

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON) ... See More ⇒

 7.1. Size:547K  cn hmsemi
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HM25N03D

HM25N03Q Description The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON) ... See More ⇒

 8.1. Size:835K  cn hmsemi
 hm25n08d.pdf pdf_icon

HM25N03D

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON) ... See More ⇒

 8.2. Size:674K  cn hmsemi
 hm25n06q.pdf pdf_icon

HM25N03D

HM25N06Q Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON) ... See More ⇒

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Detailed specifications: HM2333, HM2341, HM2341B, HM2369, HM24N20, HM24N20K, HM24N20KA, HM24N50A, AO3401, HM25N03Q, HM25N06D, HM25N06Q, HM25N08D, HM25N50, HM25P03D, HM25P03K, HM25P03Q

Keywords - HM25N03D MOSFET specs

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