All MOSFET. HM25N03D Datasheet

 

HM25N03D Datasheet and Replacement


   Type Designator: HM25N03D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6
 

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HM25N03D Datasheet (PDF)

 ..1. Size:583K  cn hmsemi
 hm25n03d.pdf pdf_icon

HM25N03D

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 7.1. Size:547K  cn hmsemi
 hm25n03q.pdf pdf_icon

HM25N03D

HM25N03QDescription The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 8.1. Size:835K  cn hmsemi
 hm25n08d.pdf pdf_icon

HM25N03D

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)

 8.2. Size:674K  cn hmsemi
 hm25n06q.pdf pdf_icon

HM25N03D

HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

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Datasheet: HM2333 , HM2341 , HM2341B , HM2369 , HM24N20 , HM24N20K , HM24N20KA , HM24N50A , AO3400 , HM25N03Q , HM25N06D , HM25N06Q , HM25N08D , HM25N50 , HM25P03D , HM25P03K , HM25P03Q .

History: SM4309PSK

Keywords - HM25N03D MOSFET datasheet

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