All MOSFET. HM25N03Q Datasheet

 

HM25N03Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM25N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN3X3EP

 HM25N03Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM25N03Q Datasheet (PDF)

 ..1. Size:547K  cn hmsemi
hm25n03q.pdf

HM25N03Q HM25N03Q

HM25N03QDescription The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 7.1. Size:583K  cn hmsemi
hm25n03d.pdf

HM25N03Q HM25N03Q

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 8.1. Size:835K  cn hmsemi
hm25n08d.pdf

HM25N03Q HM25N03Q

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)

 8.2. Size:674K  cn hmsemi
hm25n06q.pdf

HM25N03Q HM25N03Q

HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 8.3. Size:462K  cn hmsemi
hm25n06d.pdf

HM25N03Q HM25N03Q

HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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