HM25P03D Specs and Replacement
Type Designator: HM25P03D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN5X6-8L
HM25P03D substitution
- MOSFET ⓘ Cross-Reference Search
HM25P03D datasheet
hm25p03d.pdf
P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S D Schematic diagram RDS(ON) ... See More ⇒
hm25p03k.pdf
HM25P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM25P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -25A D S RDS(ON) ... See More ⇒
hm25p03q.pdf
P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S D Schematic diagram RDS(ON) ... See More ⇒
hm25p06d.pdf
HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON) ... See More ⇒
Detailed specifications: HM24N20KA, HM24N50A, HM25N03D, HM25N03Q, HM25N06D, HM25N06Q, HM25N08D, HM25N50, K4145, HM25P03K, HM25P03Q, HM25P04D, HM25P04K, HM25P15, HM25P15D, HM25P15K, HM26N18K
Keywords - HM25P03D MOSFET specs
HM25P03D cross reference
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