HM2800D Specs and Replacement
Type Designator: HM2800D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: DFN2X2-6L
HM2800D substitution
- MOSFET ⓘ Cross-Reference Search
HM2800D datasheet
hm2800d.pdf
HM2800D N-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2 D1 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2 G1 S2 S1 General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O... See More ⇒
hm2807.pdf
HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON) ... See More ⇒
Detailed specifications: HM25P03K, HM25P03Q, HM25P04D, HM25P04K, HM25P15, HM25P15D, HM25P15K, HM26N18K, CS150N03A8, HM2803D, HM2807, HM2807D, HM2809D, HM2809DR, HM2907, HM2N10, HM2N10B
Keywords - HM2800D MOSFET specs
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HM2800D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
