HM2803D Datasheet and Replacement

HM2803DDual P-Channel Enhancement Mode Power MOSFET Description The HM2803D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G2G1S2S1General Features Schematic diagram VDS = -20V,ID = -5.0A RDS(ON)

HM2809DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)

HM2800DN-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2G1S2S1General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O

HM2809D P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809D is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

HM2807D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)