HM2809D Specs and Replacement

Type Designator: HM2809D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

tr ⓘ - Rise Time: 33.1 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.188 Ohm

Package: DFN2X2

HM2809D substitution

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HM2809D datasheet

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HM2809D

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HM2809D

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HM2809D

HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON) ... See More ⇒

 9.2. Size:1154K  cn hmsemi
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HM2809D

HM2800D N-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2 D1 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2 G1 S2 S1 General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O... See More ⇒

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Detailed specifications: HM25P15, HM25P15D, HM25P15K, HM26N18K, HM2800D, HM2803D, HM2807, HM2807D, IRFP450, HM2809DR, HM2907, HM2N10, HM2N10B, HM2N10MR, HM2N15PR, HM2N15R, HM2N20

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.