All MOSFET. HM2N10B Datasheet

 

HM2N10B Datasheet and Replacement


   Type Designator: HM2N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: SOT23
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HM2N10B Datasheet (PDF)

 ..1. Size:347K  cn hmsemi
 hm2n10b.pdf pdf_icon

HM2N10B

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 8.1. Size:351K  cn hmsemi
 hm2n10.pdf pdf_icon

HM2N10B

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 8.2. Size:377K  cn hmsemi
 hm2n10mr.pdf pdf_icon

HM2N10B

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 9.1. Size:478K  cn hmsemi
 hm2n15r.pdf pdf_icon

HM2N10B

HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

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History: HM2P10R | 2SK951-01 | 3N50Z | AP9997AGH | 2SK956 | 3080K | 30P06

Keywords - HM2N10B MOSFET datasheet

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