HM2N25 Specs and Replacement
Type Designator: HM2N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO92
HM2N25 substitution
- MOSFET ⓘ Cross-Reference Search
HM2N25 datasheet
hm2n25.pdf
HM2N25 N-Channel Enhancement Mode Power MOSFET Description The HM2N25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 250V,ID =2A Schematic diagram RDS(ON) ... See More ⇒
hm2n20mr.pdf
HM2N20MR 200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS D R ... See More ⇒
hm2n20.pdf
HM2N20 N-Channel Enhancement Mode Power MOSFET D Description The HM2N20 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON) ... See More ⇒
Detailed specifications: HM2N10B, HM2N10MR, HM2N15PR, HM2N15R, HM2N20, HM2N20MR, HM2N20PR, HM2N20R, AO3407, HM2N60, HM2N65R, HM2N70, HM2N70R, HM2P10PR, HM2P10R, HM3018, HM3018JR
Keywords - HM2N25 MOSFET specs
HM2N25 cross reference
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HM2N25 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
